Organic Field-Effect Transistors with Reversible Threshold Voltage Shifts for Memory Element
نویسندگان
چکیده
We introduce an charge-accepting layer on a poly(methyl methacrylate) (PMMA) dielectric to investigate the reversible threshold voltage (Vth) shifts in all-polymer n-channel organic field-effect transistor (OFET) using an organic semiconductor of an poly{[N,N’-bis(2-octyldodecyl)-naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]-alt-5,5’-(2,2’-bithiophene)} (P(NDI2OD-T2)). Top contact drain-source with a bottom-gate contact structure device exhibited a unipolar property with n-channel behavior. Furthermore, the existence of poly(3-hexylthiophene) (P3HT) films as a charge-accepting-like storage layers resulted in a reversible Vth shifts upon the application of external gate bias (Vbias). Hence, all-polymer organic transistor with the charge-accepting layer exhibited a large memory window (∆Vth = 10.7 V) for write and erase electrically without major degradation in saturation mobility (μsat = 1.8~2.8×10 cm V s).
منابع مشابه
Role of InAs and GaAs terminated heterointerfaces at source/channel on the mixed As-Sb staggered gap tunnel field effect transistor structures grown by molecular beam epitaxy
Related Articles On the link between electroluminescence, gate current leakage, and surface defects in AlGaN/GaN high electron mobility transistors upon off-state stress Appl. Phys. Lett. 101, 033508 (2012) Controllable threshold voltage shifts of polymer transistors and inverters by utilizing gold nanoparticles Appl. Phys. Lett. 101, 033306 (2012) Surface doping in pentacene thin-film transist...
متن کاملRevealing buried interfaces to understand the origins of threshold voltage shifts in organic field-effect transistors.
متن کامل
Stable organic thin-film transistors
Organic thin-film transistors (OTFTs) can be fabricated at moderate temperatures and through cost-effective solution-based processes on a wide range of low-cost flexible and deformable substrates. Although the charge mobility of state-of-the-art OTFTs is superior to that of amorphous silicon and approaches that of amorphous oxide thin-film transistors (TFTs), their operational stability general...
متن کاملTuning the threshold voltage in electrolyte-gated organic field-effect transistors.
Low-voltage organic field-effect transistors (OFETs) promise for low power consumption logic circuits. To enhance the efficiency of the logic circuits, the control of the threshold voltage of the transistors are based on is crucial. We report the systematic control of the threshold voltage of electrolyte-gated OFETs by using various gate metals. The influence of the work function of the metal i...
متن کاملInfluence of Buffers and Culture Media on Diamond Solution-Gated Field Effect Transistors Regarding Stability and Memory Effect
The transfer characteristics of a nanocrystalline diamond (NCD)-based solution-gated field effect transistor (SGFET) under the influence of inorganic and organic compounds were studied. Studied compounds included three different buffer solutions (Phosphate, HEPES, McIlvaine buffer) and commonly used culture media (fibronectin, albumin and fetal bovine serum). It was found that buffers with the ...
متن کامل